hyb5116160bsj-70 Infineon Technologies Corporation, hyb5116160bsj-70 Datasheet

hyb5116160bsj-70

Manufacturer Part Number

hyb5116160bsj-70

Description

16-bit Dynamic 4k-refresh

Manufacturer

Infineon Technologies Corporation

Datasheet

1.HYB5116160BSJ-70.pdf (24 pages)

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1M x 16-Bit Dynamic RAM

(4k-Refresh)

Advanced Information

Semiconductor Group

1 048 576 words by 16-bit organization

0 to 70 °C operating temperature

Performance:

Single + 5 V ( 10 %) supply

Low power dissipation

max. 550 active mW (-50 version)

max. 495 active mW (-60 version)

max. 440 active mW (-70 version)

11 mW standby (TTL)

5.5. mW standby (MOS)

Output unlatched at cycle end allows two-dimensional chip selection

Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh

and self refresh

Fast page mode capability

2 CAS / 1 WE

All inputs, outputs and clocks fully TTL-compatible

4096 refresh cycles/64 ms

Plastic Package:

t RAC

t CAC

t AA

t RC

t PC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Fast page mode cycle time

P-SOJ-42-1 400 mil

-50

110

-60

HYB5116160BSJ-50/-60/-70

130

-70

1.96

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