k4m563233g-hn75t Samsung Semiconductor, Inc., k4m563233g-hn75t Datasheet - Page 8

• Manufacturer Part Number: k4m563233g-hn75t
• Description: 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

K4M563233G - F(H)N/G/L/F
AC CHARACTERISTICS
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
SAC
SAC
SAC
t
t
SHZ
SLZ
CC
CC
CC
OH
OH
OH
CH
CL
SS
SH
Min
6.0
2.5
2.5
2.5
2.0
1.0
1
-
-
-
-
- 60
1000
Max
5.4
5.4
-
-
-
-
Min
7.5
9.0
2.5
2.5
2.5
2.5
2.0
1.0
1
-
-
- 75
1000
Max
5.4
5.4
7
7
-
-
Min
7.5
2.5
2.5
2.5
2.5
2.5
2.0
1.0
12
25
Mobile-SDRAM
1
-7L
1000
Max
5.4
5.4
20
20
8
8
February 2006
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2