hx6408 Honeywell International's Solid State Electronics Center (SSEC), hx6408 Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
hx6408
Manufacturer Part Number
hx6408
Description
512k X 8 Static Ram
Manufacturer
Honeywell International's Solid State Electronics Center (SSEC)
Datasheet
1.HX6408.pdf
(11 pages)
HX6408
Advanced Information
RADIATION HARDNESS RATINGS (1)
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
4
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=3.0V to 3.6V, TA=-55
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DSEC certified lab.
Total Dose
Transient Dose Rate Upset
Transient Dose Rate Survivability
Soft Error Rate
Neutron Fluence
Symbol
VDD
VPIN
TSTORE
TSOLDER
PD
IOUT
VPROT
,JC
TJ
VDDRAMP
Symbol
www.honeywell.com
VPIN
not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
specification.
VDD
TA
Parameter
Parameter
Supply Voltage Range (2)
Voltage on Any Pin (2)
Storage Temperature (Zero Bias)
Soldering Temperature (5 seconds)
Maximum Power Dissipation (3)
DC or Average Output Current
EST Input Protection Voltage (4)
Thermal Resistance (Jct-to-Case)
Junction Temperature
Parameter
Supply Voltage (referenced to VSS)
Ambient Temperature
Voltage on Any Pin (referenced to VSS)
VDD Turn on ramp time
Limits (2)
<1X10
_1X10
_1X10
_1X10
_3X10
_1X10
-10
10
12
14
5
6
36 Pin FP
Min
-0.3
-55
3.0
Upsets/bit-day
Description
rad(SiO
o
rad(Si)/s
rad(Si)/s
C to 125
2000
Min
Typ
Units
-0.5
-0.5
N/cm
-65
3.3
25
Rating
2
2
o
)
C
VDD+0.3
VDD+0.5
Max
125
3.6
50
Max
150
270
175
4.6
2.5
25
2
worst case environment
T
Pulse width ^50 ns, X-
VDD>3.6V, T
A
Test Conditions
Pulse width ^50 ns
energy, Unbiased,
= 85°C, Adams 90%
1MeV equivalent
ray,VDD=3.6V,
T
T
T
Units
A
A
A
Units
=25°C
=25°C
=25°C
°C/W
ms
°C
mA
°C
V
V
°C
°C
W
V
V
V
A
=25°C