k4h2g0638a Samsung Semiconductor, Inc., k4h2g0638a Datasheet - Page 14
![no-image](/images/no-image-200.jpg)
k4h2g0638a
Manufacturer Part Number
k4h2g0638a
Description
Stacked 2gb A-die Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H2G0638A.pdf
(23 pages)
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DDR SDRAM stacked 2Gb A-die (x4)
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
TBD
TBD
TBD
TBD
Rev. 0.0 June. 2005
Specification
DDR333
TBD
TBD
TBD
TBD
DDR SDRAM
Preliminary
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
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