hsb562 Hi-Sincerity Microelectronics Corp., hsb562 Datasheet

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hsb562

Manufacturer Part Number
hsb562
Description
Pnp Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet

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HSB562
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB562 is designed for general purpose low frequency power amplifier
applications.
Absolute Maximum Ratings
Electrical Characteristics
Classification Of h
HSB562
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ........................................................................................................................... -55 ~ +150 C
Junction Temperature ................................................................................................................... +150 C Maximum
Total Power Dissipation (T
V
V
V
I
C
CBO
CEO
EBO
Collector Current ............................................................................................................................................. -1 A
Symbol
*V
Range
BV
BV
BV
V
Rank
Cob
Emitter to Base Voltage ............................................................................................................................... -5 V
*h
Collector to Base Voltage .......................................................................................................................... -25 V
Collector to Emitter Voltage ....................................................................................................................... -20 V
I
BE(on)
CBO
CE(sat)
f
CBO
CEO
T
EBO
FE
Min.
-25
-20
85
-5
HI-SINCERITY
MICROELECTRONICS CORP.
-
-
-
-
-
FE
A
=25 C) ............................................................................................................... 900 mW
Typ.
350
38
-
-
-
-
-
-
-
A
=25 C)
(T
85-170
A
B
=25 C)
Max.
-500
240
-1
-1
-
-
-
-
-
MHz
Unit
mV
uA
pF
V
V
V
V
I
I
I
V
I
I
V
V
V
C
C
E
C
C
CB
CE
CE
CB
=-10uA, I
=-1mA, I
=-10uA, I
=-800mA, I
=-500mA, V
=-20V, I
=-2V, I
=-2V, I
=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
C
C
B
C
E
=-500mA
=-500mA
=0
E
=0
=0
=0
B
=-80mA
CE
Test Conditions
=-2V
120-240
C
Spec. No. : HE6513
Issued Date : 1993.01.15
Revised Date : 2005.02.14
Page No. : 1/5
HSMC Product Specification
TO-92

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hsb562 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB562 is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (T =25 C) ............................................................................................................... 900 mW A Maximum Voltages and Currents (T V Collector to Base Voltage ...

Page 2

... Collector Current (mA) On Voltage & Collector Current 10000 1000 V BE(on) 100 0 Collector Current (mA) Capacitance & Reverse-Biased Voltage 1000 100 10 1 0.1 1 Reverse Biased Voltage (V) HSB562 1000 = 100 100 1000 1000 @ V =2V CE 100 1000 10000 10000 1000 Cob 10 100 Spec. No. : HE6513 Issued Date : 1993.01.15 Revised Date : 2005 ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. Power Derating 1000 900 800 700 600 500 400 300 200 100 Ambient Temperature-Ta( HSB562 100 120 140 160 o C) Spec. No. : HE6513 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 3/5 HSMC Product Specification ...

Page 4

... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB562 Marking: Pb Free Mark Pb-Free: " . " ...

Page 5

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HSB562 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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