mgfs45v2325 Mitsumi Electronics, Corp., mgfs45v2325 Datasheet
mgfs45v2325
Manufacturer Part Number
mgfs45v2325
Description
2.3 - 2.5ghz Band 30w Internally Matchd Gaas Fet
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.MGFS45V2325.pdf
(2 pages)
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Quantity
Price
Company:
Part Number:
mgfs45v2325A
Manufacturer:
MITSUBISHI
Quantity:
5 000
Company:
Part Number:
mgfs45v2325A-01
Manufacturer:
Mitsubishi
Quantity:
1 400
Company:
Part Number:
mgfs45v2325A-51
Manufacturer:
Mitsubishi
Quantity:
1 400
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
ELECTRICAL CHARACTERISTICS (Ta=25°C)
DESCRIPTION
FEATURES
APPLICATION
item 01 : 2.3~2.5GHz band power amplifier
item 51 : 2.3~2.5GHz band digital radio communication
QUALITY GRADE
RECOMMENDED BIAS CONDITIONS
*1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.3, 2.4, 2.5GHz, f=5MHz
*2 : Channel to case
The MGFS45V2325 is an internally impedance matched
GaAs power FET especially designed for use in 2.3~2.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
Symbol
*1 : Tc=25°C
VGS (off)
P
G
ID
IM3
Rth (ch-c)
V
V
I
I
I
P
Tch
Tstg
Symbol
D
GR
GF
add
Class A operation
Internally matched to 50 ( ) system
High output power
High power gain
High power added efficiency
Loe distortion [item -51]
IG
V
I
RG=25
1dB
LP
GDO
GSO
T
D
DS
=6.5A
=10V
P
G
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
add=45% (TYP.) @f=2.3~2.5GHz
1dB
LP
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
=12dB (TYP.) @f=2.3~2.5GHz
=30W (TYP.) @f=2.3~2.5GHz
Saturated drain current
Linear power gain
Drain current
Power added efficiency
3rd order IM distortion
Thermal resistance
Output power at 1dB gain
compression
Parameter
Parameter
*1
*1
*2
-65 ~ +175
Ratings
V
V
175
-15
-15
-61
DS
DS
22
76
88
V
2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
=10V, I
=3V, I
f
method
D
D
=60mA
Unit
mA
mA
(RF off)=6.5A, f=2.3~2.5GHz
°C
°C
Test conditions
W
V
V
A
MITSUBISHI
ELECTRIC
OUTLINE DRAWING
GF-38
MITSUBISHI SEMICONDUCTOR <GaAs FET>
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
< Keep safety first in your circuit designs! >
R1.2
MGFS45V2325
Min.
-42
44
11
—
—
—
—
24±0.3 (0.945±0.012)
20.4±0.2 (0.803±0.008)
16.7 (0.658)
Limits
Typ.
7.5
-45
45
12
45
—
—
(0.024±0.006)
Until : millimeters (inches)
0.6±0.15
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
Max
1.7
-5
—
—
—
—
—
°C/W
dBm
dBc
Unit
dB
%
V
A
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mgfs45v2325 Summary of contents
Page 1
... DESCRIPTION The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched system High output power P =30W (TYP.) @f=2.3~2.5GHz 1dB High power gain G =12dB (TYP ...
Page 2
... S11 f (GHz) Magn. Angle(deg) 2.20 0.36 -168 2.25 0.39 170 2.30 0.40 150 2.35 0.39 132 2.40 0.36 112 2.45 0.30 87 2.50 0.24 53 2.55 0.21 1 2.60 0.28 -48 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 16 50 VDS=10V IDS=6.5A f=2.4GHz 2.5 2. -10 -20 -30 -40 -50 -60 30 S-Parameter (TYP.) S21 S12 Magn ...