ms203mw3723s100 AVX Corporation, ms203mw3723s100 Datasheet
ms203mw3723s100
Manufacturer Part Number
ms203mw3723s100
Description
Mis/mos Single Layer Capacitors Metal Insulator Semiconductor/metal Oxide Semiconductor
Manufacturer
AVX Corporation
Datasheet
1.MS203MW3723S100.pdf
(2 pages)
MIS/MOS Single Layer Capacitors
Metal Insulator Semiconductor/Metal Oxide Semiconductor
HOW TO ORDER
TYPICAL ELECTRICAL SPECIFICATIONS
MS = MOS
MI = MIS
Series
MS
Code
Peak Voltage at +25ºC
Frequency Range
pF /mm
Voltage Stability
Rated Voltage
Material
TCC
DF
10, 20, 30, 40
supply design
OS = Special
2
order please
Square size
Case Size
Typical
in mils
20
SPECIFIC CAPACITANCE (pF/mm
5 = 50 WVDC
S = Special
2 = 2 WVDC
4 = 4 WVDC
Z = 10 WVDC
3 = 25 WVDC
Working
Voltage
± 60 ppm/ºC
Independent
140
120
100
MIS (SiON)
Order
1.5x Rated
80
60
40
20
≤ 40 GHz
3
0
≤ 0.1%
≤100
20
150
MIS \ MOS Specific Capacitance vs Rated Voltage
MOS
30
S = SiO
N = SiON for MIS
Dielectric Code
Style ONLY
Style ONLY
S
2
for MOS
40
± 30 ppm/ºC
Independent
MOS (SiO
1.5x Rated
≤ 40 GHz
≤ 0.1%
≤ 50
85
50
“R” for decimal place.
Third digit = number
of zeros or after “R”
significant figures or
significant figures.
EIA Capacitance
First two digits =
2
Rated Voltage (V)
Capacitance
)
Code in pF.
100
60
TEST METHODS
For applications in RF, Microwave and GHz ranges, AVX
offers MIS/MOS Capacitors. These are Single Layer
Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to
produce small, high Q, temperature stable, high break down
voltage, low leakage capacitors. To ease assembly, AVX
offers a wide range of termination styles for epoxy or solder
die attach and subsequent Gold or Aluminum wire thermoson-
ic and ultrasonic bonding. Custom applications and designs
are welcome. Please contact your local representative.
BENEFITS
• MIS, SiON dielectric up to 100V applications
• MOS, SiO
• Sizes as small as 10 mils (254µm) squared
• DC to GHz operation
• High Q, low leakage
2
70
) VERSUS RATED VOLTAGE
MIL-STD-883
MIL-STD-883
MIL-STD-202
Specification
Capacitance
M = ± 20%
Tolerance
K = ± 10%
F = ± 1%
J = ± 5%
80
MIS
M
2
dielectric up to 50V applications
90
1st position top layer
2nd position top bonding layer
3rd position bottom bonding layer
4th position bottom layer
1 = AI
2 = Cr
3 = Au
OSOS = Special Order
Please Supply Design
Shear Strength
Bond Strength
100
Termination Code
Parameter
4 = Ni
5 = Pd
6 = Ta
Life
3723
110
7 = TaN
8 = TiW
9 = TiWNi
Method of Paragraph
W = Antistatic
D = Tested Wafer
2011.7
T = Tested Whole
2019
108
Packaging
Waffle Pack
Wafer
Diced on
Tape
W
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ms203mw3723s100 Summary of contents
Page 1
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor HOW TO ORDER Series Case Size Working Code Square size Voltage MS = MOS in mils WVDC MI = MIS 10, 20, 30 ...
Page 2
... Frequency (MHz) 22pF 6pF 3pF Frequency Frequency (MHz) © AVX Corporation AVX S.A., France ASIA-PACIFIC Tel: ++33 (1) 69-18-46-00 AVX/Kyocera, Singapore FAX: ++33 (1) 69-28-73-87 Asia-Pacific Headquarters AVX GmbH, Germany Tel: (65) 6286-7555 Tel: ++49 (0) 8131-9004-0 FAX: (65) 6488-9880 FAX: ++49 (0) 8131-9004-44 ...