sia433edj Vishay, sia433edj Datasheet

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sia433edj

Manufacturer Part Number
sia433edj
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
sia433edj-T1-GE3
Manufacturer:
LITTLEFUSE
Quantity:
40 000
Part Number:
sia433edj-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
sia433edj-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 20
2.05 mm
6
(V)
PowerPAK SC-70-6L-Single
D
5
D
4
0.018 at V
0.026 at V
0.065 at V
S
D
R
1
S
DS(on)
D
2.05 mm
2
GS
GS
GS
G
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
J
3
Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
= 150 °C)
b, f
P-Channel 20-V (D-S) MOSFET
Part # code
I
- 12
- 12
D
- 4
(A)
a
a
Marking Code
d, e
A
B L X
X X X
= 25 °C, unless otherwise noted
Q
Steady State
g
20 nC
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• 100 % R
• Built in ESD Protection with Zener Diode
• Typical ESD Performance: 1800 V
• Compliant to RoHS Directive 2002/95/EC
• Portable Devices
Symbol
Symbol
T
R
R
J
Definition
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Load Switch
- Battery Switch
- Charger Switch
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
5.3
28
- 55 to 150
- 11.3
- 9.1
- 2.9
3.5
2.2
Limit
- 12
- 12
- 12
± 12
- 20
- 50
260
19
12
b, c
b, c
b, c
b, c
a
a
b, c
a
Maximum
G
6.5
36
Vishay Siliconix
SiA433EDJ
®
R
P-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
D
S
1

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sia433edj Summary of contents

Page 1

... 2.05 mm 2.05 mm Part # code 4 Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA433EDJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... 2.0 2 SiA433EDJ Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° °C C 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) ...

Page 4

... SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 7 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0. ° 7 ° 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65472 S09-2114-Rev. A, 12-Oct- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA433EDJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 ...

Page 6

... SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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