sqm120n0 Vishay, sqm120n0 Datasheet
sqm120n0
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sqm120n0 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQM120N04-1M7L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 40 V ± 20 120 120 120 A 465 90 405 mJ 437 175 °C LIMIT UNIT 40 °C/W ...
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... SQM120N04-1M7L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.005 0.004 0.003 0.002 0.001 0.000 4 100 125 150 175 SQM120N04-1M7L Vishay Siliconix 200 160 120 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQM120N04-1M7L Vishay Siliconix TYPICAL CHARACTERISTICS T 0.010 0.008 0.006 0.004 T = 150 °C J 0.002 °C J 0.000 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 0.5 0.1 - 0.3 - 0.7 - 1 ...
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... C Single Pulse 0.1 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQM120N04-1M7L Vishay Siliconix 10 μs 100 μ 100 ms DC 100 is specified -1 10 www.vishay.com 1 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...