ipb05n03lbg Infineon Technologies Corporation, ipb05n03lbg Datasheet - Page 7

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ipb05n03lbg

Manufacturer Part Number
ipb05n03lbg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev. 0.94
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
38
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
150 °C
10
20
t
100 °C
T
AV
j
60
[°C]
[µs]
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=40 A pulsed
g s
10
Q
Q
gate
g
Q
20
sw
[nC]
Q
g d
5 V
IPB05N03LB
30
20 V
15 V
Q
g ate
2006-05-10
40

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