ipb03n03lbg Infineon Technologies Corporation, ipb03n03lbg Datasheet - Page 2

• Manufacturer Part Number: ipb03n03lbg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 0.94
2)
3)
4)
5)
connection. PCB is vertical in still air.
5
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Diagrams are related to straight lead versions.
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j,max
=150 °C and duty cycle D <0.25 for V
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
GS
fs
(BR)DSS
GS(th)
=1 K/W the chip is able to carry 173 A.
thJC
thJA
DS(on)
G
<-5 V
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=60 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=100 µA
D
GS
GS
DS
DS(on)max
=55 A
=55 A
=0 V,
=0 V,
=0 V
5)
,
min.
1.2
30
-
-
-
-
-
-
-
-
-
Values
typ.
139
1.6
0.1
3.2
2.3
0.9
10
10
-
-
-
-
IPB03N03LB
max.
100
100
3.9
2.8
62
40
1
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2006-05-10