ipb036n12n3 Infineon Technologies Corporation, ipb036n12n3 Datasheet
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ipb036n12n3
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ipb036n12n3 Summary of contents
Page 1
... I T =25 ° =100 ° =25 °C D,pulse =100 =25 °C tot stg page 1 IPB036N12N3 G 120 V 3.6 m 180 A Value Unit 180 A 139 720 900 mJ ±20 V 300 W -55 ... 175 °C 55/175/56 2009-07-16 ...
Page 2
... GSS = =100 A DS(on |>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPB036N12N3 G Values Unit min. typ. max 0.5 K 120 - - 0.1 1 µ 100 - 1 100 ...
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... oss =25 ° S,pulse =100 =25 ° =37 /dt =100 A/µ page 3 IPB036N12N3 G Values min. typ. max. - 10400 13800 pF - 1320 1760 - 158 211 - 5 ...
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... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPB036N12N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 ...
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... [ Typ. forward transconductance g =f 250 200 150 100 50 25 ° [V] GS page 5 IPB036N12N3 =25 ° 5 100 200 300 I [A] D =25 ° 120 160 I [ 400 200 2009-07-16 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss 1 10 Crss [V] DS page 6 IPB036N12N3 2700 µA 270 µA - 100 140 T [° 175 °C, max 25 °C 175 °C 25 °C, max 0.5 1 1.5 V [V] ...
Page 7
... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB036N12N3 =100 A pulsed gate 120 Q [nC] gate 160 Q g ate 2009-07-16 ...
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... PG-TO263-7 Rev. 2.0 page 8 IPB036N12N3 G 2009-07-16 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 IPB036N12N3 G 2009-07-16 ...