ipb030n08n3 Infineon Technologies Corporation, ipb030n08n3 Datasheet

ipb030n08n3

Manufacturer Part Number

ipb030n08n3

Description

Optimos Tm 3 Power Transistor Power Mosfet

Manufacturer

Infineon Technologies Corporation

Datasheet

1.IPB030N08N3.pdf (9 pages)

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Bonase Electronics (HK) Co., Limited

Part Number:

ipb030n08n3 G

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INFINEON

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ipb030n08n3G

Manufacturer:

INFINEON

Quantity:

12 500

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Rev. 2.1

Features

• Ideal for high frequency switching and sync. rec.

• Optimized technology for motor drive applications

• Excellent gate charge x R

• Very low on-resistance R

• Superior thermal resistance

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

OptiMOS

Type

Package

Marking

J-STD20 and JESD22

See figure 3 for more detailed information

See figure 13 for more detailed information

(TM)

3 Power-Transistor

IPB030N08N3 G

PG-TO263-7

030N08N

=25 °C, unless otherwise specified

DS(on)

product (FOM)

for target applications

Symbol Conditions

D,pulse

tot

, T

stg

page 1

=100 A, R

=25 °C

=100 °C

=25 °C

=25 Ω

Product Summary

DS(on),max

-55 ... 175

55/175/56

Value

160

137

640

510

±20

214

IPB030N08N3 G

160

3.0

Unit

°C

mΩ

2008-06-19

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