ipb025n10n3g Infineon Technologies Corporation, ipb025n10n3g Datasheet - Page 4

• Manufacturer Part Number: ipb025n10n3g
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
350
300
250
200
150
100
10
10
10
10
10
50
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
10
50
0
V
T
C
DS
100
10
[°C]
DC
1
[V]
10 ms
100 µs
1 ms
10 µs
150
10
1 µs
2
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
200
180
160
140
120
100
=f(t
10
10
80
60
40
20
10
0
C
-1
-2
0
); V
0
10
p
)
0.02
-5
0.01
0.1
0.2
0.05
0.5
single pulse
GS
≥10 V
p
10
/T
50
-4
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPB025N10N3 G
150
10
-1
2008-10-20
200
10
0