suu50n03-09p Vishay, suu50n03-09p Datasheet - Page 2
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suu50n03-09p
Manufacturer Part Number
suu50n03-09p
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SUU50N03-09P.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUU50N03-09P
Manufacturer:
VISHAY
Quantity:
12 500
SUU50N03-09P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Independent of operating temperature.
120
c
c
90
60
30
0
a
0
Parameter
c
c
c
c
c
b
b
V
V
2
GS
DS
5 V
b
= 10 thru 6 V
Output Characteristics
-- Drain-to-Source Voltage (V)
b
J
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
R
Q
SM
4 V
3 V
2 V
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
8
C
10
V
I
V
V
V
D
= 25_C)
GS
DS
DS
DS
GS
≅ 50 A, V
= 0 V, V
I
= 30 V, V
= 15 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
5 ,
F
GS
DS
= 0 V, V
= 50 A, V
= V
= 15 V, R
= 15 V, R
= 0 V, I
= 30 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
D
GS
GS
GS
GS
= 25 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
GS
D
= 250 mA
D
L
L
GS
D
= 250 mA
= 20 V
= 20 A
5 ,
= 0.3 Ω
= 0.3 Ω
= 20 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
= 125_C
g
g
= 125_C
D
D
120
= 2.5 Ω
90
60
30
= 50 A
0
50
0
1
V
GS
Transfer Characteristics
25_C
-- Gate-to-Source Voltage (V)
Min
T
1.0
30
50
20
2
C
= 125_C
3
0.0076
0.0115
Typ
2200
410
180
1.5
7.5
5.0
1.2
15
80
22
35
9
8
S-41696—Rev. B, 20-Sep-04
a
Document Number: 72420
--55_C
4
0.0095
100
Max
0.015
0.014
120
100
3.0
1.5
50
23
15
35
12
70
1
5
Unit
nC
nA
mA
mA
pF
p
ns
ns
ns
Ω
Ω
Ω
V
V
A
S
A
V
C
6