bso110n03msg Infineon Technologies Corporation, bso110n03msg Datasheet - Page 6

• Manufacturer Part Number: bso110n03msg
• Description: Optimos 3 M-series Power- Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev.1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
20
15
10
DS
=f(T
5
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=12.1 A; V
20
10
98 %
GS
V
T
j
DS
=10 V
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
2.5
1.5
0.5
10
10
10
=f(T
SD
2
1
0
-1
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
150 °C
0.5
DS
20
; I
D
=250 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
25 °C, 98%
BSO110N03MS G
100
1.5
150 °C, 98%
140
2008-07-08
180
2