nvtfs4823n ON Semiconductor, nvtfs4823n Datasheet - Page 4
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nvtfs4823n
Manufacturer Part Number
nvtfs4823n
Description
Nvtfs4823n Power Mosfet
Manufacturer
ON Semiconductor
Datasheet
1.NVTFS4823N.pdf
(6 pages)
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100
1.0
0.1
10
10
0
1
1
0.1
0
R
Thermal Limit
Package Limit
Figure 9. Resistive Switching Time Variation
V
I
V
V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
D
C
DS(on)
GS
C
DD
GS
rss
= 10 A
C
= 25°C
C
t
t
d(on)
d(off)
iss
= 15 V
= 10 V
= 10 V
oss
V
5
DS
t
Figure 7. Capacitance Variation
Limit
f
DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
1
10
10
15
10
20
TYPICAL CHARACTERISTICS
V
T
GS
J
25
100 ms
10 ms
10 ms
1 ms
dc
= 25°C
= 0 V
t
http://onsemi.com
r
100
100
30
4
10
40
30
20
10
30
25
20
15
10
8
6
4
2
0
0
5
0
0.5
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source Voltage vs. Total
Figure 12. Maximum Avalanche Energy vs.
Q
GS
J
T
= 25°C
gs
J
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
50
SD
2
Starting Junction Temperature
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
g
Q
, TOTAL GATE CHARGE (nC)
gd
75
4
0.7
Charge
Q
100
6
T
0.8
125
8
V
T
I
I
DS
D
J
D
0.9
= 25°C
= 15 A
= 24 A
150
10
= 15 V
200
1.0
12