nvtfs5116pl ON Semiconductor, nvtfs5116pl Datasheet

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nvtfs5116pl

Manufacturer Part Number
nvtfs5116pl
Description
Nvtfs5116pl Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NVTFS5116PL
Power MOSFET
−60 V, −14 A, 52 mW, Single P−Channel
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
2. Psi (Y) is used as required per JESD51−12 for packages in which
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 0
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
2, 3, 4)
Power Dissipation
R
Continuous Drain Cur-
rent R
3, 4)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
L(pk)
AEC−Q101 Qualified Site and Change Controls
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring
These are Pb−Free Devices
YJ−mb
qJA
they are not constants and are only valid for the particular conditions noted.
substantially less than 100% of the heat flows to single case surface.
second is higher but is dependent on pulse duration and duty cycle.
(Notes 1, 3)
= 30 A, L = 0.1 mH, R
YJ−mb
qJA
(Notes 1, 2, 3)
DS(on)
(Notes 1 &
J
= 25°C, V
(Notes 1,
to Minimize Conduction Losses
Parameter
Parameter
DD
(T
= 50 V, V
Steady
Steady
T
J
State
State
A
G
= 25°C unless otherwise noted)
= 25°C, t
= 25 W)
GS
T
T
T
T
T
T
mb
mb
T
T
mb
mb
A
A
= 10 V,
A
A
p
= 100°C
= 100°C
= 25°C
= 25°C
= 100°C
= 100°C
= 10 ms
= 25°C
= 25°C
Symbol
R
Symbol
T
2
R
V
YJ−mb
, 2 oz. Cu pad.
J
V
E
I
P
P
, T
DSS
DM
T
qJA
I
I
I
GS
AS
D
D
S
D
D
L
(Note 1)
stg
Value
−55 to
Value
−126
+175
7.2
−60
±20
−14
−10
−17
260
47
3.2
1.6
21
10
−6
−4
45
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
NVTFS5116PLTAG
NVTFS5116PLTWG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 511AB
(BR)DSS
−60 V
(Note: Microdot may be in either location)
Device
WDFN8
(m8FL)
ORDERING INFORMATION
5116
A
Y
WW
G
G (4)
1
http://onsemi.com
P−Channel MOSFET
72 mW @ −4.5 V
52 mW @ −10 V
R
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D (5−8)
DS(on)
(Pb−Free)
(Pb−Free)
Package
WDFN8
WDFN8
MARKING DIAGRAM
Publication Order Number:
G
S
S
S
MAX
1
S (1,2,3)
AYWWG
1500/Tape & Reel
5000/Tape & Reel
5116
NVTFS5116PL/D
G
Shipping
I
D
−14 A
MAX
D
D
D
D

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nvtfs5116pl Summary of contents

Page 1

... G (4) S (1,2,3) MARKING DIAGRAM 5116 S D AYWWG 5116 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Package Shipping WDFN8 1500/Tape & Reel (Pb−Free) WDFN8 5000/Tape & Reel (Pb−Free) Publication Order Number: NVTFS5116PL/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate ...

Page 3

T = 25° − −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.075 0.065 0.055 0.045 0.035 −V , ...

Page 4

C iss 1200 1000 800 600 400 C 200 oss C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = − −7 A ...

Page 5

Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 100 ...

Page 6

... SOLDERING FOOTPRINT* 8X 0.42 0.65 4X PITCH 0.66 3.60 2.30 2.37 3.46 DIMENSION: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVTFS5116PL/D MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 _ 12 ...

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