bso080p03ns3g Infineon Technologies Corporation, bso080p03ns3g Datasheet - Page 2

• Manufacturer Part Number: bso080p03ns3g
• Description: Optimos 3 P3-power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1)
connection. PCB is vertical in still air.
2)
3)
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
See figure 3 for more detailed information
See figure 13 for more detailed information
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
G
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
V
V
T
V
T
V
V
V
|V
I
p
p
D
page 2
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=-14.8 A
DS
=V
=-30 V, V
=-30 V, V
=0 V, I
=-25 V, V
=6 V, I
=10 V, I
|>2|I
2
2
cooling area
cooling area
GS
, I
D
|R
D
D
D
=0.25 mA
=-12.4 A
D
=-150 µA
DS(on)max
=-14.8 A
GS
GS
DS
=0 V,
=0 V,
=0 V
1)
1)
,
,
,
min.
-3.1
-30
22
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
-2.5
8.1
6.7
5.9
44
-
-
-
-
-
-
-
-
-
BSO080P03NS3 G
max.
-100
-100
11.0
-1.9
110
150
8.0
35
50
80
-1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2009-05-26