bso065n03msg Infineon Technologies Corporation, bso065n03msg Datasheet - Page 7

no-image

bso065n03msg

Manufacturer Part Number
bso065n03msg
Description
Optimos 3 M-series Power- Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev.1.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
0.1
10
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25
D
=1 mA
10
20
t
T
125 °C
AV
j
60
[°C]
[µs]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
5
D
=16 A pulsed
g s
10
Q
Q
15
gate
g
Q
sw
[nC]
Q
20
BSO065N03MS G
g d
25
6 V
24 V
30
15 V
Q
g ate
2008-07-08
35

Related parts for bso065n03msg