ipl60r385cp Infineon Technologies Corporation, ipl60r385cp Datasheet - Page 4

• Manufacturer Part Number: ipl60r385cp
• Description: 600v Coolmos
• Manufacturer: Infineon Technologies Corporation

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating temperature
Storage temperature
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
speed
1) Limited by
2) Pulse width
3)
4) Identical low side and high side switch with identical
3
Table 3
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Reflow soldering temperature
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm
Preliminary Data Sheet
T
Repetitive avalanche causes additional power losses that can be calculated as P
PCB is vertical without air stream cooling.
j
= 25 °C, unless otherwise specified.
4)
Maximum ratings
Maximum ratings
Thermal characteristics
Thermal characteristics
T
t
j,max.
p
limited by
Maximum duty cycle
2)
2)
4)
1)
T
j,max
2)3)
2)3)
Symbol
R
R
T
Symbol
I
I
E
E
I
dv/dt
V
P
T
T
I
I
dv/dt
di
sold
thJC
thJA
D
D,pulse
AR
S
S,pulse
j
stg
AS
AR
GS
tot
f
/dt
Min.
-
-
-
R
Min.
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
G
4
Typ.
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
600V CoolMOS™ CP Power Transistor
2
copper area (thickness 70µm) for drain connection.
9.0
5.7
27
227
0.34
3.4
50
20
30
83
150
125
9.0
27
15
400
Max.
1.5
45
260
AV
=E
AR
*f.
Unit
A
A
mJ
A
V/ns
V
W
°C
°C
A
A
V/ns
A/µs
Unit
°C/W
°C
Note / Test Condition
T
T
T
I
(see table 17)
I
V
static
AC (f>1 Hz)
T
T
T
V
T
(see table 18)
D
D
C
C
C
C
C
C
j
DS
DS
=3.4 A,V
=3.4 A,V
=25 °C
= 25 °C
= 100°C
=25 °C
=25 °C
=25 °C
=25 °C
=0...480 V
=0...400 V, I
Note /
Test Condition
SMD version, device
on PCB, 6cm
area
reflow MSL 3
Rev. 1.1, 2010-06-28
Maximum ratings
1)
IPL60R385CP
DD
DD
=50 V
=50 V
SD
2
≤
cooling
I
D
,