bso220n Infineon Technologies Corporation, bso220n Datasheet - Page 7

• Manufacturer Part Number: bso220n
• Description: Sipmos-r Small Signal Transistor
• Manufacturer: Infineon Technologies Corporation

Data Sheet
Typ. transfer characteristics I
parameter: t
V
Forward characteristics of reverse diode
I
parameter: T
F
DS
= f ( V
10
≥ 2 x I
10
10
10
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
A
A
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-1
0.0
2
1
0
BSO220N
SD
)
D
0.4
p
x R
j
= 80 µs
, t
0.8
p
DS(on) max
= 80 µs
1.2
T
T
T
T
j
j
j
j
= 25 ˚C typ
= 150 ˚C typ
= 25 ˚C (98%)
= 150 ˚C (98%)
1.6
2.0
D
= f ( V
2.4
V
V
V
V
GS
GS
SD
5.0
3.0
)
7
Gate threshold voltage
V
parameter : V
GS(th)
3.2
2.4
2.0
1.6
1.2
0.8
0.4
0.0
V
-60
= f ( T
-20
j
)
GS
= V
20
DS
, I
D
60
= 10 µA
BSO 220N
100
V
T
j
05.99
160
max
typ
min