gf4450 Greenray Industries Inc., gf4450 Datasheet - Page 2

• Manufacturer Part Number: gf4450
• Description: N-channel Enhancement-mode Mosfet Neral Semiconductor
• Manufacturer: Greenray Industries Inc.

Electrical Characteristics
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
Max. Diode Forward Current
Notes: (1) Surface Mounted on FR4 Board, t
Test Circuit
(2) Pulse test; pulse width
Switching
V
GEN
R
G
(2)
V
(2)
300 s, duty cycle
IN
G
(2)
10s
S
D
V
DD
N-Channel Enhancement-Mode MOSFET
R
(T
D
2%
J
= 25°C unless otherwise noted)
Symbol
R
V
BV
I
t
t
DUT
I
I
C
DS(on)
C
V
GS(th)
D(on)
Q
Q
C
d(on)
d(off)
GSS
DSS
Q
g
I
t
t
oss
SD
DSS
rss
iss
S
fs
gs
gd
r
f
g
V
OUT
V
V
V
V
V
V
V
V
V
V
I
DS
DS
I
DS
D
GS
GS
DS
DS
DD
S
GS
DS
Test Condition
= 2.1A, V
= V
= 0V, V
= 30V, V
= 0V, I
= 6.0V, I
= 60V, V
= 30V, R
= 15V, I
1A, V
= 10V, I
f = 1.0MH
V
Waveforms
V
I
R
Switching
5V, V
D
DS
GS
GS
G
= 7.5A
, I
= 6
= 30V
GEN
= 0V
D
GS
D
GS
D
D
GS
GS
D
Output, V
= 250 A
GS
L
= 250 A
=
= 7.5A
= 7.5A
= 6.5A
= 10V
Input, V
= 30
Z
= 10V
= 0V
= 10V
±
= 0V
20V
t
d(on)
OUT
IN
10%
Min
2.0
60
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
t
on
50%
10%
t
PULSE WIDTH
r
90%
3147
0.71
Typ
283
140
12
14
36
65
12
14
17
13
78
31
–
–
–
–
–
–
t
d(off)
GF4450
±
Max
117
1.0
1.2
2.1
50%
24
30
91
30
20
40
100
–
–
–
–
–
–
–
–
–
90%
t
off
10%
90 %
t
INVERTED
Unit
f
m
nC
nA
pF
ns
V
V
A
S
V
A
A