ntms4801n ON Semiconductor, ntms4801n Datasheet - Page 3

• Manufacturer Part Number: ntms4801n
• Description: Power Mosfet 30 V, 12 A, N Channel, So 8
• Manufacturer: ON Semiconductor

0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
22
20
18
16
14
12
10
8
6
4
2
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
2
Figure 3. On−Resistance vs. Gate−to−Source
V
V
I
D
DS
Figure 1. On−Region Characteristics
GS
V
= 12 A
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
1
Figure 5. On−Resistance Variation with
3.4 V to10V
= 10 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
4
0
2
25
Temperature
Voltage
3
6
50
3.2 V
4
75
TYPICAL PERFORMANCE CURVES
100
8
T
J
5
T
I
D
= 25°C
J
= 12 A
= 25°C
3.0 V
http://onsemi.com
2.8 V
2.6 V
125
6
10
150
3
100000
10000
0.016
0.014
0.012
0.008
0.006
0.004
1000
0.01
100
22
20
18
16
14
12
10
8
6
4
2
0
1.5
2
Figure 4. On−Resistance vs. Drain Current and
5
T
V
V
J
Figure 6. Drain−to−Source Leakage Current
DS
GS
= 25°C
4
V
V
≥ 10 V
DS
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
T
6
2
J
I
= 25°C
T
D,
J
DRAIN CURRENT (AMPS)
8
= 100°C
Gate Voltage
2.5
10
15
vs. Voltage
V
V
T
T
GS
GS
J
J
= 150°C
= 125°C
12
= 4.5 V
= 10 V
14
20
3
T
J
= −55°C
16
3.5
18
25
20
30
22
4