ntms5p02 ON Semiconductor, ntms5p02 Datasheet - Page 5

• Manufacturer Part Number: ntms5p02
• Description: Power Mosfet -20 V, -5.4 A, Single P-channel So-8
• Manufacturer: ON Semiconductor

1000
4000
3000
2000
1000
100
100
0.1
10
10
1
0
0.1
10
1
V
SINGLE PULSE
T
V
I
V
Figure 9. Resistive Switching Time Variation
C
C
C
GS
Figure 11. Maximum Rated Forward Biased
D
DD
GS
iss
rss
= 25°C
= −5.4 A
V
= 20 V
DS
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −16 V
= −4.5 V
V
5
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
R
= 0 V
−V
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
versus Gate Resistance
DS(on)
GATE−TO−SOURCE OR
GS
Safe Operating Area
C
0
1
rss
V
−V
LIMIT
GS
DS
= 0 V
10
5
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
10
10
1 ms
10 ms
dc
T
C
C
J
15
oss
iss
= 25°C
t
t
t
t
http://onsemi.com
f
r
d(on)
d(off)
100
100
20
5
5
4
3
2
1
0
0
Figure 8. Gate−To−Source and Drain−To−Source
5
4
3
2
1
0
Figure 10. Diode Forward Voltage versus Current
Figure 12. Diode Reverse Recovery Waveform
Q1
0.2
I
S
−V
4
V
T
0.3
J
−V
GS
SD
Voltage versus Total Charge
Q
= 25°C
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
DS
g
= 0 V
, TOTAL GATE CHARGE (nC)
t
p
0.4
Q2
8
QT
0.5
di/dt
t
a
12
0.6
t
rr
t
b
−V
I
S
16
GS
0.25 I
0.7
I
T
D
J
= −5.4 A
= 25°C
S
0.8
20
0.9
TIME
24
20
16
12
8
4
0
1