tga2514-epu TriQuint Semiconductor, tga2514-epu Datasheet - Page 3
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tga2514-epu
Manufacturer Part Number
tga2514-epu
Description
Ku-band 6.5 W Power Amplifier
Manufacturer
TriQuint Semiconductor
Datasheet
1.TGA2514-EPU.pdf
(9 pages)
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
R
Resistance
(channel to backside of
carrier)
SYMBOL
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70 C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
Note: Table III Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
JC
IMD3
Gain
ORL
Psat
TOI
IRL
Thermal
Parameter
@ Pout/tone = 27dBm
Third Order Intercept
Pout/tone = 27 dBm
Output Return Loss
Small Signal Gain
Input Return Loss
Saturated Power
Output IMD3 @
PARAMETER
RF CHARACTERIZATION TABLE
THERMAL INFORMATION
Vd = 8 V
I
Pdiss = 20.8 W
D
Test Conditions
= 2.6 A
(T
(Vd = 8V, Id = 2.6 A)
A
= 25 C, Nominal)
TABLE III
TABLE II
f = 13-18 GHz
f = 13-18 GHz
f = 13-18 GHz
f = 13-16 GHz
f = 16-18 GHz
CONDITION
f = 14 GHz
f = 14 GHz
TEST
Advance Product Information
(
150
T
o
CH
C)
TYPICAL
( C/W)
37.5
24
12
12
38
44
33
R
3.9
T
JC
November 9, 2004
TGA2514-EPU
(HRS)
1 E+6
T
UNITS
dBm
dBm
M
dBc
dB
dB
dB
3