tqm7m5004 TriQuint Semiconductor, tqm7m5004 Datasheet

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tqm7m5004

Manufacturer Part Number
tqm7m5004
Description
Quad-band Gsm/gprs/edge-linear Power Amplifier Module
Manufacturer
TriQuint Semiconductor
Datasheet

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TQM7M5004
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Part Number:
TQM7M5004
Manufacturer:
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Quantity:
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Functional Block Diagram
Product Description
The TQM 7M5004 is an extremely small (7x7x1.1mm
module for GSM/EDGE applications. This module has been optimized for high EDGE
efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS
efficiency. Two EDGE quiescent current states are provided to minimize current
consumption during backed-off power settings.
The module incorporates two highly-integrated InGaP power amplifier die with a CMOS
controller. The CMOS controller implements a fully integrated closed-loop power
control within the module for GSM Operation. This eliminates the need for any external
couplers, power detectors, current sensing etc., to assure the output power level. The
latter is set directly from the V
band select, mode (EDGE or GSM) inputs. Module construction is a low-profile over-
molded land-grid array on laminate.
Electrical Specifications (Nominal)
Preliminary Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website:
Revision J, April 20, 2006
Vbias (digital)
GSM 850 / 900 IN
DCS / PCS in
Band Select
TX_EN
VBATT
Mode Select
VRAMP
Parameter
EDGE Pout 28.5
GSM Pout 34.5
Efficiency
Efficiency
(400KHz)
ACPR
Gain
Pin
Min
43
20
29
0
GSM/EDGE Multi-mode Power Amplifier Module
850
35.5
30.5
Typ
-62
50
29
23
Band
2
ramp
Max
32.0
-58
Logic
4
Power Control
input from the DAC. The module has Tx enable,
34.5
28.5
30.0
Min
45
20
0
900 Band
35.5
31.5
Typ
-62
52
29
23
2
Max
33.0
-58
4
3
) multi-mode power amplifier
40/45
37/36
32.0
Min
28
20
0
www.triquint.com
DCS / PCS
46/50
38/37 40/39
28.5
Typ
-62
33
25
2
DCS / PCS Out
VCC
GSM 850 / 900 Out
Max
-58
4
Units
dBm
dBm
dBm
dBc
dB
%
%
Features
• Very compact size – 7×7×1.1 mm
• High GSM efficiency – GSM 850 50%,
• High EDGE efficiency – GSM 850 23%, GSM
• Low Quiescent Current Mode for EDGE
• Positive supply voltage – 3.0 to 4.5 V
• 50 Ω input and output impedances.
• GPRS class 12.
• CMOS band select and internal closed-loop
• High-reliability InGaP technology.
• Ruggedness 10:1
• No external Vref Required
Applications
• GSM/EDGE handsets
• GSM/EDGE wireless cards & data links
Package Style
TQM 7M5004
RF_in_GSM
RF_in_DCS
GSM900 52%, DCS 46%, PCS 50%
900 23%, DCS 25%, PCS 25%
Pout <= 18.5dBm (low-band) & <= 18dBm
(high-band)
power control for GSM Operation.
Preliminary Data Sheet
Ground
(digital)
Tx_En
Vramp
Vbias
Mode
Vbatt
BS
Package Size: LGA 7 x 7 x 1.1 mm
Gnd
Gnd
Top View
Ground
3
.
RF_out_DCS
RF_out_GSM
Ground
Ground
Vcc
1

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