bso302sn Infineon Technologies Corporation, bso302sn Datasheet

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bso302sn

Manufacturer Part Number
bso302sn
Description
Sipmos Small-signal-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
Data Sheet
SIPMOS ® Small-Signal-Transistor
Features
• Single N channel
• Avalanche rated
• Logic Level
• d v /d t rated
Preliminary Data
Maximum Ratings, at T j = 25 ˚C, unless otherwise specified
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
C
C
jmax
C
= 9.8 A, V
= 9.8 A, V
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 150 ˚C
DS
DD
= 24 V, d i /d t = 200 A/µs,
= 25 V, R
GS
= 25 Ω
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Type
BSO 302SN
jmax
jmax
Product Summary
1
Symbol
I
I
E
I
E
d v /d t
V
P
T
T
D
AR
Dpulse
j
stg
AS
AR
GS
tot
Package
SO 8
-55 ... +150
-55 ... +150
55/150/56
Value
39.2
± 20
V
R
I
250
9.8
9.8
0.2
D
6
2
Ordering Code
Q67041-S4029
DS
DS(on)
BSO 302SN
0.013 Ω
9.8
30
Unit
A
mJ
A
mJ
kV/µs
V
W
˚C
05.99
V
A

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bso302sn Summary of contents

Page 1

Preliminary Data SIPMOS ® Small-Signal-Transistor Features • Single N channel Enhancement mode • • Avalanche rated • Logic Level • rated Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec cooling area Electrical Characteristics ˚C, unless otherwise specified Parameter ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance V ≥ 8 DS(on)max D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics ˚C, unless otherwise specified Parameter ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold ≥0 ...

Page 5

Power dissipation tot A BSO 302SN 2.6 W 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 Safe operating area ...

Page 6

Typ. output characteristics parameter µs p BSO 302SN tot ...

Page 7

Typ. transfer characteristics I parameter µ ≥ DS(on) max 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ...

Page 8

Avalanche Energy parameter 9 Ω GS 260 mJ 220 200 180 160 140 120 100 ...

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