bso305n Infineon Technologies Corporation, bso305n Datasheet

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bso305n

Manufacturer Part Number
bso305n
Description
Sipmos Small-signal-transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSO305N.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSO305N
Manufacturer:
SIEMENS
Quantity:
5 510
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSO305N
Manufacturer:
SIEMENS
Quantity:
5 510
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSO305N
Manufacturer:
INTERSIL
Quantity:
20 000
Data Sheet
SIPMOS  Small-Signal-Transistor
Features
• Dual N Channel
•
• Avalanche rated
• Logic Level
• d v /d t rated
Preliminary Data
Maximum Ratings, at T j = 25 ˚C, unless otherwise specified
Parameter
Continuous drain current, one channel active
T
Pulsed drain current, one channel active
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation, one channel active
T
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
C
C
jmax
C
= 6 A, V
= 6 A, V
= 25 ˚C, T
= 25 ˚C
= 25 ˚C
= 150 ˚C
DD
DS
A
= 24 V, d i /d t = 200 A/µs,
= 25 V, R
= 25 ˚C
GS
= 25 Ω
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Type
BSO 305 N
jmax
jmax
Product Summary
1
Symbol
I
I
E
I
E
d v /d t
V
P
T
T
D
Dpulse
AR
j
stg
AS
AR
GS
tot
Package
SO 8
-55 ... +150
-55 ... +150
55/150/56
Value
V
R
I
100
±20
0.2
D
24
6
6
6
2
Ordering Code
Q67041-S4028
DS
DS(on)
BSO 305N
0.035 Ω
30
6
Unit
A
mJ
A
mJ
kV/µs
V
W
˚C
05.99
V
A

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bso305n Summary of contents

Page 1

Preliminary Data SIPMOS  Small-Signal-Transistor Features • Dual N Channel • Enhancement mode • Avalanche rated • Logic Level • rated Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current, ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec cooling area Electrical Characteristics ˚C, unless otherwise specified Parameter ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance ≤ DS(on)max D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics ˚C, unless otherwise specified Parameter ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold 0 Gate ...

Page 5

Power dissipation tot A BSO 305 N 2.6 W 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area ...

Page 6

Typ. output characteristics parameter µs p BSO 305 tot ...

Page 7

Typ. transfer characteristics I parameter µs p ≥ DS(on) max Forward characteristics of reverse diode ...

Page 8

Avalanche Energy parameter Ω 100 100 ...

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