dmc2020usd Diodes, Inc., dmc2020usd Datasheet - Page 7

• Manufacturer Part Number: dmc2020usd
• Description: 20v Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics – Q2 P-CHANNEL
Typical Characteristics – Q2 P-CHANNEL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11)
Forward Transfer Admittance (Note 11 & 12)
Diode Forward Voltage (Note 11)
Continuous Source Current
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
Notes:
DMC2020USD
Document number: DS32121 Rev. 4 - 2
30
25
20
15
10
11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
5
0
0
V
GS
V
GS
= -4.0V
-V , DRAIN-SOURCE VOLTAGE (V)
V
Fig. 12 Typical Output Characteristics
= -4.5V
GS
DS
Characteristic
= -10V
0.5
1.0
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
V
= -3.5V
GS
V
1.5
GS
= -1.8V
= -2.0V
2.0
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
C
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
Q
Q
R
I
oss
t
t
SD
rss
DSS
S
iss
fs
gs
gd
r
f
g
g
g
|
@T
7 of 11
A
= 25°C unless otherwise specified
-0.4
Min
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
15
10
1610
9.45
15.4
16.8
12.4
94.1
42.4
Typ
-0.7
-0.7
157
145
8.0
2.5
3.3
5
0
26
33
14
-
-
-
-
0
V
DS
Fig. 13 Typical Transfer Characteristics
0.5
Max
-1.0
-1.0
-1.0
-1.8
T = 85°C
±10
-V
= -5V
33
45
A
Diodes Incorporated
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T = 125°C
GS
A
T = 150°C
A
, GATE SOURCE VOLTAGE (V)
A Product Line of
1
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
V
A
Ω
T = -55°C
A
1.5
T = 25°C
A
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
R
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
GS
G
= 6Ω , I
= 0V, I
= -20V, V
= ±8V, V
= V
= -4.5V, I
= -2.5V, I
= -5V, I
= 0V, I
= -10V, V
= 0V, V
= -2.5V
= -4.5V
= -4.5V, V
2
GS
DMC2020USD
Test Condition
, I
D
D
S
D
GS
D
= -1A
= -1A
= -250μA
DS
= -4A
D
D
GS
GS
= -250μA
DS
2.5
= 0V, f = 1MHz
= -6A
= -3A
-
= 0V
© Diodes Incorporated
V
I
= 0V
= 0V,
D
= -10V,
DS
February 2011
= -4A
= -10V
3