dmc2990udj Diodes, Inc., dmc2990udj Datasheet - Page 7

• Manufacturer Part Number: dmc2990udj
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMC2990UDJ
Document number: DS35481 Rev. 5 - 2
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
5
4
3
2
1
0
0
-50
0
0
0
-25
2
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE( C)
Fig. 21 Typical Junction Capacitance
J
DS
Fig. 23 Gate Charge Characteristics
2
Q , TOTAL GATE CHARGE (nC)
4
0
G
6
25
4
8
50
I = -250µA
10
V
D
DS
75
6
= 10V, I = -4.5A
12
100
D
14
I = -1mA
°
8
D
125
f = 1MHz
C
C
rss
16
oss
C
iss
150
18
10
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1,000
0.001
0.01
100
0.1
0.8
0.6
0.4
0.2
10
10
1
0
1
0.1
0.4
0
T
T = 25 C
Single Pulse
J(MAX)
A
Fig. 20 Diodes Forward Voltage vs. Current
2
V , DRAIN-SOURCE VOLTAGE (V)
-V , DRAIN-SOURCE VOLTAGE (V)
V , SOURCE- DRAIN VOLTAGE (V)
°
= 150 C
DS
Fig. 24 SOA, Safe Operation Area
Fig. 22 Typical Leakage Current vs.
R
Limited
SD
DS
DS(ON)
4
P
0.6
W
P
°
W
= DC
6
= 10s
Drain-Source Voltage
1
P
W
P
8
= 1s
P
W
W
= 1ms
= 100ms
10
0.8
P
T = 25°C
W
A
P
12
W
= 10ms
= 100µs
10
14
DMC2990UDJ
1.0
T = 125°C
A
T = -25°C
16
T = 85°C
A
P
T = 150°C
A
W
A
© Diodes Incorporated
= 10µs
18
October 2011
1.2
100
20