nvd5862n ON Semiconductor, nvd5862n Datasheet - Page 3

• Manufacturer Part Number: nvd5862n
• Description: Nvd5862n Power Mosfet
• Manufacturer: ON Semiconductor

0.030
0.025
0.020
0.015
0.010
0.005
0.000
200
160
120
80
40
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
4
T
J
V
= 25°C
I
GS
D
Figure 3. On−Resistance vs. Gate Voltage
−25
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
= 45 A
V
= 10 V
DS
V
5
GS
1
T
, DRAIN−TO−SOURCE VOLTAGE (V)
V
J
0
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
GS
= 10 V
25
6
Temperature
2
50
7
75
3
100
8
TYPICAL CHARACTERISTICS
125
4
T
I
D
J
9
= 25°C
http://onsemi.com
= 45 A
5.8 V
6.2 V
6.0 V
5.6 V
5.2 V
150
5
10
175
3
100000
10000
0.006
0.005
0.004
0.003
1000
200
180
160
140
120
100
80
60
40
20
0
10
3
10
V
V
Figure 6. Drain−to−Source Leakage Current
V
T
Figure 4. On−Resistance vs. Drain Current
GS
GS
DS
J
20
= 25°C
= 10 V
= 0 V
≥ 5 V
V
T
V
DS
Figure 2. Transfer Characteristics
J
GS
20
= 125°C
, DRAIN−TO−SOURCE VOLTAGE (V)
30
, GATE−TO−SOURCE VOLTAGE (V)
4
I
T
D
J
40
, DRAIN CURRENT (A)
= 25°C
vs. Voltage
30
T
T
J
J
50
= 150°C
= 125°C
5
60
T
J
40
= −55°C
70
6
80
50
90
100
60
7