nvd5890n ON Semiconductor, nvd5890n Datasheet

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nvd5890n

Manufacturer Part Number
nvd5890n
Description
Nvd5890n Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NVD5890N
Power MOSFET
40 V, 123 A, Single N−Channel DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 0
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent (R
Power Dissipation
(R
Continuous Drain Cur-
rent (R
Power Dissipation
(R
Pulsed Drain Current
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche En-
ergy (V
L = 0.3 mH, I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Compliant
Current Systems
Low R
MSL 1/260°C
AEC Q101 Qualified
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Motor Drivers
Pump Drivers for Automotive Braking, Steering and Other High
qJC
qJA
)
) (Note 1)
qJC
qJA
DD
DS(on)
) (Note 1)
)
= 32 V, V
L(pk)
to Minimize Conduction Losses
Parameter
= 40 A, R
GS
= 10 V,
(T
t
J
Steady
p
State
G
=10ms
= 25°C unless otherwise noted)
= 25 W)
T
T
T
T
T
T
T
T
A
A
A
A
A
C
C
C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
I
Symbol
DmaxPkg
T
V
dV/dt
V
J
E
I
P
P
, T
DSS
DM
T
I
I
I
GS
D
D
AS
S
D
D
L
stg
−55 to
Value
"20
18.5
123
107
400
100
175
100
240
260
4.0
6.0
40
95
24
1
Unit
V/ns
mJ
°C
°C
W
W
V
V
A
A
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
V
(BR)DSS
40 V
ORDERING INFORMATION
G
Y
WW
5890N = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENT
http://onsemi.com
3.7 mW @ 10 V
Gate
CASE 369C
(Bent Lead)
1 2
= Year
= Work Week
= Pb−Free Package
1
STYLE 2
R
Drain
Drain 3
D
DPAK
DS(on)
4
2
3
Publication Order Number:
Source
S
4
N−Channel
NVD5890N/D
123 A
I
D

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nvd5890n Summary of contents

Page 1

... R I DS(on 123 A D N−Channel CASE 369C DPAK (Bent Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain 2 Drain 3 1 Gate Source Y = Year WW = Work Week 5890N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NVD5890N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2) 1. Surface−mounted on FR4 board using 650 mm 2. Surface−mounted on FR4 board using 36 mm ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge (T = 25°C unless otherwise noted) J Symbol Test Condition 25° ...

Page 4

280 260 7 V 240 220 200 180 160 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics ...

Page 5

C iss 5000 4000 3000 2000 C oss 1000 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

... SINGLE PULSE 0.01 0.000001 0.00001 0.0001 ORDERING INFORMATION Order Number NVD5890NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES 0.001 0.01 0.1 t, TIME (s) Figure 12. Thermal Response Package DPAK (Pb− ...

Page 7

... REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− 6.17 0.243 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVD5890N/D ...

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