dmp2018lfk Diodes, Inc., dmp2018lfk Datasheet - Page 3

• Manufacturer Part Number: dmp2018lfk
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP2018LFK
Document number: DS35357 Rev. 3 - 2
0.03
0.02
0.01
30
25
20
15
10
1.7
1.5
1.3
1.1
0.9
0.7
0.5
5
0
0
0
-50 -25
0
Fig. 5 On-Resistance Variation with Temperature
-V , DRAIN-SOURCE VOLTAGE (V)
V
vs. Drain Current and Gate Voltage
Fig. 1 Typical Output Characteristic
5
-I , DRAIN-SOURCE CURRENT (A)
T , AMBIENT TEMPERATURE (°C)
DS
GS
V
D
A
V
GS
0.5
Fig. 3 Typical On-Resistance
= -2.0V
V
GS
V
GS
V
= -2.5V
0
GS
GS
= -3.0V
V
= -
GS
= -
10
= -4.5V
3.5
= -10V
4.0
25
V
V
V
GS
1
15
50
= -10V
V
GS
= -2.5V
75
V
V
20
V
GS
GS
I = -5A
GS
D
1.5
= -1.5V
= -4.5V
= -5V
100
V
I = -10A
GS
D
25
= -10V
125 150
2
30
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0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.03
0.02
0.01
30
25
20
15
10
5
0
0
0
0
-50 -25
0
Fig. 6 On-Resistance Variation with Temperature
V
V
GS
DS
T = 85°C
0.5
-V
A
Fig. 2 Typical Transfer Characteristic
= -5V
T = 125°C
= -4.5V
T , AMBIENT TEMPERATURE (°C)
5
GS
A
V
vs. Drain Current and Temperature
I = -5A
A
GS
D
T = 150°C
, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical On-Resistance
A
= -5V
0
-I , DRAIN CURRENT (A)
D
1
V
10
I = -10A
GS
D
25
= -10V
T = -55°C
A
1.5
T = 25°C
15
50
A
75
2
20
DMP2018LFK
T = 150°C
T = 125°C
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
A
100
2.5
25
© Diodes Incorporated
125 150
August 2011
30
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