Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
Notes:
DMP2160U
Document number: DS31586 Rev. 3 - 2
Low On-Resistance
•
•
•
Very Low Gate Threshold Voltage V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q 101 Standards for High Reliability
80 mΩ @ V
100 mΩ @ V
140 mΩ @ V
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in
4. Short duration pulse test used to minimize self-heating effect.
Characteristic
GS
GS
GS
= -4.5V
= -2.5V
= -1.8V
Characteristic
Characteristic
@T
2
A
FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
= 25°C unless otherwise specified
T
GS(th)
@T
J
= 25°C
A
= 25°C unless otherwise specified
≤ 1V
TOP VIEW
T
T
A
A
Symbol
R
BV
V
= 25°C
= 70°C
DS (ON)
I
C
I
V
C
GS(th)
C
g
DSS
GSS
oss
FS
SD
rss
DSS
iss
www.diodes.com
SOT-23
1 of 4
Min
-0.4
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Mechanical Data
Gate
•
•
•
•
•
•
•
•
Internal Schematic
Symbol
Symbol
T
J,
V
V
R
I
P
GSS
DM
DSS
I
T
θ JA
D
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
D
STG
Typ
-0.6
627
⎯
⎯
⎯
⎯
60
73
92
⎯
64
53
7
P-CHANNEL ENHANCEMENT MODE MOSFET
Drain
Source
±100
±800
Max
-1.0
-0.9
100
140
-1.0
80
⎯
⎯
⎯
⎯
⎯
-55 to +150
G
Value
Value
-3.2
-2.5
±12
TOP VIEW
-20
-13
1.4
90
Unit
mΩ
μA
nA
pF
pF
pF
V
V
S
V
D
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
S
= 0V, I
= -16V, V
= ±8V, V
= ±12V, V
= V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -10V, I
= 0V, I
= -10V, V
Test Condition
GS
, I
D
S
DMP2160U
D
= -250μA
= -1.0A
D
DS
D
D
D
GS
GS
= -250μA
DS
© Diodes Incorporated
= -1.5A
November 2008
Units
Units
= -1.5A
= -1.2A
= -1.2A
°C/W
= 0V
°C
= 0V
= 0V
W
V
V
A
A
= 0V