dmp21d0ufb4 Diodes, Inc., dmp21d0ufb4 Datasheet - Page 4
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dmp21d0ufb4
Manufacturer Part Number
dmp21d0ufb4
Description
20v P-channel Enhancement Mode Mosfet
Manufacturer
Diodes, Inc.
Datasheet
1.DMP21D0UFB4.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
DMP21D0UFB4
D
atasheet number: DS35279 Rev. 1 - 2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25
0
0
-50 -25
Fig. 7 On-Resistance Variation with Temperature
I = -500mA
V
D
GS
T , AMBIENT TEMPERATURE (°C)
vs. Drain Current and Gate Voltage
= -5.0V
-I , DRAIN-SOURCE CURRENT (A)
A
0.4
T , AMBIENT TEMPERATURE (°C)
D
A
I = -250mA
V
Fig. 5 Typical On-Resistance
D
0
GS
V
0
GS
= -2.5V
= -1.8V
25
0.8
25
I = -250µA
D
50
V
V
50
GS
GS
= -2.5V
I = -1mA
D
= -4.5V
1.2
75
75
100
100
1.6
125 150
125 150
2.0
www.diodes.com
4 of 6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
-50 -25
0.4
0
Fig. 8 On-Resistance Variation with Temperature
V
Fig. 10 Diode Forward Voltage vs. Current
GS
-V , SOURCE-DRAIN VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
vs. Drain Current and Temperature
= -4.5V
A
0.4
Diodes Incorporated
SD
Fig. 6 Typical On-Resistance
I = -250mA
0.6
V
D
0
-I , DRAIN CURRENT (A)
GS
A Product Line of
D
= -2.5V
25
V
I = -500mA
D
T = 125°C
T = -55°C
T = 150°C
0.8
GS
T = 25°C
T = 85°C
A
A
A
A
A
= -5.0V
T = 25°C
0.8
50
A
1.2
75
DMP21D0UFB4
100
1.0
1.6
© Diodes Incorporated
125 150
1.2
2.0
May 2011