tsm9428dcs Taiwan Semiconductor Company, Ltd. (TSC), tsm9428dcs Datasheet

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tsm9428dcs

Manufacturer Part Number
tsm9428dcs
Description
20v Dual N-channel Mosfet
Manufacturer
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet
Features
Application
Ordering Information
Absolute Maximum Rating
Thermal Performance
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current, V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
TSM9428DCS RL
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Load Switch
PA Switch
Part No.
SOP-8
Package
GS
SOP-8
@4.5V
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6, 7, 8. Drain
GS
@4.5V.
(Ta = 25
2.5Kpcs / 13” Reel
Packing
o
C unless otherwise noted)
Ta = 25
Ta = 70
a,b
o
o
C
C
1/6
PRODUCT SUMMARY
V
DS
20
(V)
Symbol
Symbol
T
J
20V Dual N-Channel MOSFET
V
V
, T
I
P
T
I
DM
I
DS
GS
D
S
D
J
JF
JA
STG
Dual N-Channel MOSFET
30 @ V
40 @ V
Block Diagram
R
DS(on)
-55 to +150
GS
GS
(mΩ)
Limit
Limit
+150
= 4.5V
= 2.5V
1.7
2.5
1.6
20
±8
20
30
50
6
TSM9428D
Version: A07
I
D
6.0
5.2
o
o
Unit
Unit
C/W
C/W
(A)
o
o
W
V
V
A
A
A
C
C

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tsm9428dcs Summary of contents

Page 1

... Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package TSM9428DCS RL SOP-8 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V @4.5V. GS Pulsed Drain Current, V @4.5V GS ...

Page 2

Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...

Page 3

Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 20V Dual N-Channel MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM9428D Transfer Characteristics Gate Charge Version: A07 ...

Page 4

Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 20V Dual N-Channel MOSFET ( unless otherwise noted) 4/6 TSM9428D Threshold Voltage Version: A07 ...

Page 5

Marking Diagram 20V Dual N-Channel MOSFET SOP-8 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) ...

Page 6

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...

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