km29u64000it Samsung Semiconductor, Inc., km29u64000it Datasheet - Page 7

• Manufacturer Part Number: km29u64000it
• Description: 8m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

VALID BLOCK
NOTE :
1. The KM29U64000 may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(KM29U64000T:T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
KM29U64000T, KM29U64000IT
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles in the Same Page
Block Erase Time
blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaran-
teed though its initial number could be reduced. (Refer to the attached technical notes)
CLE
H
H
X
X
X
X
L
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
Parameter
ALE
X
Item
H
H
X
X
X
L
L
L
L
L
(1)
IL
Parameter
A
or V
=0 to 70 C, KM29U64000IT:T
(
T
IH.
A
Parameter
CE
=25 C, V
X
X
X
H
L
L
L
L
L
L
L
CC
WE
H
H
X
X
X
X
=3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
I/O
VB
IN
RE
H
H
H
H
H
H
X
X
X
X
A
Test Condition
0V/V
=-40 to 85 C,
L/H
L/H
L/H
L/H
SE
X
X
X
X
X
X
V
V
CC
1014
(3)
(3)
(3)
(3)
IN
IL
Min
=0V
=0V
(2)
Symbol
7
t
t
PROG
Nop
BERS
0V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
V
CC
(2)
=2.7V~3.6V
1 TTL GATE and CL = 100pF
1 TTL GATE and CL = 50pF
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Read Mode
Write Mode
1020
Min
Typ.
Min
-
-
-
-
-
0.8V and 2.0V
0.4V to 2.4V
Value
5ns
unless otherwise noted)
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Typ
200
2
FLASH MEMORY
-
1024
Max
Max
10
10
Mode
1000
Max
10
4
Blocks
Unit
Unit
pF
pF
cycles
Unit
ms
s