mtsf3n03hdr2 Freescale Semiconductor, Inc, mtsf3n03hdr2 Datasheet - Page 4

• Manufacturer Part Number: mtsf3n03hdr2
• Description: Tmos Single N-channel Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MTSF3N03HD
4
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
6
5
4
3
2
1
0
0
– 50
0
0
0
V GS = 10 V
I D = 1.9 A
– 25
Figure 3. On–Region Characteristics
Figure 7. On–Resistance Variation
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance versus
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
2
0.5
Gate–to–Source Voltage
T J , JUNCTION TEMPERATURE ( C)
0
3.3 V
4.5 V
with Temperature
3.1 V
V GS = 10 V
25
4
50
1
2.9 V
2.7 V
2.5 V
2.3 V
2.1 V
TYPICAL ELECTRICAL CHARACTERISTICS
6
75
1.5
100
I D = 3.8 A
T J = 25 C
8
T J = 25 C
125
150
10
2
0.055
0.045
0.035
1000
0.06
0.05
0.04
0.03
100
Motorola TMOS Power MOSFET Transistor Device Data
0.1
10
6
5
4
3
2
1
0
1
0
0
1
Figure 6. On–Resistance versus Drain Current
T J = 25 C
V GS = 0 V
Figure 8. Drain–to–Source Leakage Current
V DS 10 V
1.5
Figure 4. Transfer Characteristics
1
5
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
I D , DRAIN CURRENT (AMPS)
10
2
and Gate Voltage
2
versus Voltage
100 C
V GS = 4.5
T J = 125 C
10 V
100 C
15
2.5
25 C
3
T J = –55 C
20
3
4
25 C
25
3.5
5
30
6
4