mtsf2p03hdr2 Freescale Semiconductor, Inc, mtsf2p03hdr2 Datasheet - Page 4
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mtsf2p03hdr2
Manufacturer Part Number
mtsf2p03hdr2
Description
Tmos Single P-channel Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MTSF2P03HDR2.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTSF2P03HDR2
Manufacturer:
TI
Quantity:
10 800
MTSF2P03HD
4
0.25
0.15
0.05
0.3
0.2
0.1
2.0
1.5
1.0
0.5
5
4
3
2
1
0
0
– 50
0
0
0
6 V
4.5 V
V GS = 10 V
I D = 1.2 A
– 25
1
Figure 3. On–Region Characteristics
Figure 7. On–Resistance Variation
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance versus
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
2
0.5
Gate–to–Source Voltage
T J , JUNCTION TEMPERATURE ( C)
0
3
with Temperature
25
4
3.9 V
4.1 V
1
50
5
V GS = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS
6
75
3.7 V
3.5 V
2.7 V
7
3.3 V
3.1 V
2.9 V
1.5
100
I D = 2.4 A
T J = 25 C
8
T J = 25 C
125
9
150
10
2
1000
0.14
0.12
0.10
0.08
0.06
0.04
100
Motorola TMOS Power MOSFET Transistor Device Data
4.5
3.5
2.5
1.5
0.1
0.5
10
5
4
3
2
1
1
0
1.5
0
0
Figure 6. On–Resistance versus Drain Current
V GS = 0 V
V DS 10 V
T J = 25 C
Figure 8. Drain–to–Source Leakage Current
Figure 4. Transfer Characteristics
5
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
1
I D , DRAIN CURRENT (AMPS)
10
2.5
and Gate Voltage
versus Voltage
100 C
2
V GS = 10 V
125 C
100 C
4.5 V
25 C
15
3
T J = –55 C
3
20
25 C
3.5
4
25
4
4.5
5
30