k6r4008v1c-c Samsung Semiconductor, Inc., k6r4008v1c-c Datasheet - Page 5

• Manufacturer Part Number: k6r4008v1c-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating . Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
TEST CONDITIONS*
*The above test conditions are also applied at industrial temperature range.
D
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Output Loads(A)
* Capacitive Load consists of all components of the
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
OUT
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
R
=0 to 70 C, V
L
= 50
Symbol
t
t
t
t
t
OHZ
t
t
t
t
OLZ
t
t
RC
AA
CO
OE
HZ
OH
PU
PD
LZ
30pF*
V
L
CC
= 1.5V
Min
K6R4008V1C-10
=3.3 0.3V, unless otherwise noted.)
10
3
0
0
0
3
0
-
-
-
-
- 5 -
Max
Output Loads(B)
for t
10
10
10
5
5
5
-
-
-
-
-
HZ
* Including Scope and Jig Capacitance
, t
LZ
, t
Min
K6R4008V1C-12
WHZ
12
3
0
0
0
3
0
-
-
-
-
, t
OW
D
353
OUT
, t
OLZ
Max
12
12
12
See below
6
6
6
-
-
-
-
-
0V to 3V
Value
& t
1.5V
3ns
OHZ
Min
K6R4008V1C-15
CMOS SRAM
15
3
0
0
0
3
0
-
-
-
-
PRELIMINARY
+3.3V
319
5pF*
Max
September 2001
15
15
15
7
7
7
-
-
-
-
-
Rev 5.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns