k6f2016u4d Samsung Semiconductor, Inc., k6f2016u4d Datasheet - Page 6
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k6f2016u4d
Manufacturer Part Number
k6f2016u4d
Description
128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K6F2016U4D.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K6F2016U4D
Manufacturer:
SAMSUNG
Quantity:
11 100
Company:
Part Number:
k6f2016u4d-FF70
Manufacturer:
SAMSUNG
Quantity:
11 105
K6F2016U4D Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
UB, LB
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
BLZ
t
t
t
HZ
(Address Controlled
OH
OLZ
(WE=V
(Max.) is less than
t
AA
t
CO
IH
t
t
BA
OE
)
t
AA
- 6 -
,
t
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
, UB or/and LB=V
Data Valid
t
OH
t
OHZ
t
CMOS SRAM
IL
BHZ
t
)
HZ
Revision 1.0
May 2000