k6f2008t2e Samsung Semiconductor, Inc., k6f2008t2e Datasheet - Page 6

• Manufacturer Part Number: k6f2008t2e
• Description: 256kx8 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2008T2E Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
CS
OE
Data out
t
HZ
levels.
interconnection.
1
2
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
HZ
OH
(WE=V
(Address Controlled
(Max.) is less than
t
AA
t
t
CO2
CO1
IH
t
)
OE
t
AA
6
t
,
RC
t
t
CS1=OE=V
RC
LZ
(Min.) both for a given device and from device to device
IL
Data Valid
, WE=V
IH
)
Data Valid
t
t
OHZ
OH
t
HZ(1,2)
CMOS SRAM
Preliminary
Revision 0.0
June 2003