hmc527 Hittite Microwave Corporation, hmc527 Datasheet

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hmc527

Manufacturer Part Number
hmc527
Description
Gaas Mmic I/q Mixer 8.5 - 13.5 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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3 - 108
3
Typical Applications
The HMC527 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
• VSAT
Functional Diagram
Electrical Specifi cations,
Frequency Range, RF/LO
Frequency Range, IF
Conversion Loss (As IRM)
Image Rejection
1 dB Compression (Input)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
Amplitude Balance
Phase Balance
* Unless otherwise noted, all measurements performed as downconverter.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v01.1007
= +25° C, IF= 100 MHz, LO = +19 dBm*
Order On-line at www.hittite.com
Min.
17
35
17
8.5 - 13.5
DC - 2
Typ.
+21
+25
0.7
25
45
22
8
6
Features
Wide IF Bandwidth: DC - 2 GHz
Image Rejection: 35 dB
LO to RF Isolation: 50 dB
High Input IP3: +28 dBm
Die Size: 1.49 x 1.14 x 0.1 mm
General Description
The HMC527 is a compact I/Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test fi xture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Max.
10
Min.
27
45
19
GaAs MMIC I/Q MIXER
10.5 - 12
DC - 2
Typ.
+21
+28
0.5
7.5
35
50
24
6
8.5 - 13.5 GHz
HMC527
Max.
9.5
Units
GHz
GHz
dBm
dBm
Deg
dB
dB
dB
dB
dB

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hmc527 Summary of contents

Page 1

... Isolation High Input IP3: +28 dBm Die Size: 1.49 x 1.14 x 0.1 mm General Description The HMC527 is a compact I/Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process ...

Page 2

... Return Loss 0 -5 -10 -15 -20 - Input IP3 vs. LO Drive Order On-line at www.hittite.com HMC527 8.5 - 13.5 GHz +25C +85C -55C FREQUENCY (GHz FREQUENCY (GHz +17 dBm LO = +19 dBm LO = +21 dBm 10 11 ...

Page 3

... Upconverter Performance Sideband Rejection vs. LO Drive -10 -20 -30 -40 +17 dBm +19 dBm -50 +21 dBm - Order On-line at www.hittite.com HMC527 GaAs MMIC I/Q MIXER 8.5 - 13.5 GHz 0 RETURN LOSS CONVERSION GAIN 0.5 1 1 FREQUENCY (GHz +17 dBm LO = +19 dBm LO = +21 dBm ...

Page 4

... All values in dBc below IF power level ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information Standard GP-2 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Order On-line at www.hittite.com HMC527 8.5 - 13.5 GHz nLO - ...

Page 5

... For operation to DC, this pad must not source/sink more than 3mA of current or die non-function and possible die failure will result. Pads 5 and 6 are alternate IF ports. The backside of the die must be connected to RF/DC ground. Order On-line at www.hittite.com HMC527 GaAs MMIC I/Q MIXER 8.5 - 13.5 GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm (0.003”) 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC527 8.5 - 13.5 GHz Wire Bond 3 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Wire Bond RF Ground Plane 0.254mm (0.010” ...

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