hmc516 Hittite Microwave Corporation, hmc516 Datasheet

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hmc516

Manufacturer Part Number
hmc516
Description
Low Noise Amplifier Chip, 7 - 17 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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1 - 54
1
Typical Applications
The HMC516 is ideal for use as a LNA or driver ampli-
fi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v02.0907
= +25° C, Vdd 1, 2, 3 = +3V
Order On-line at www.hittite.com
Min.
10
17
Typ.
7 - 9
19.5
0.02
2.5
20
65
13
13
15
8
Max.
0.03
3.3
88
Features
Noise Figure: 1.8 dB
Gain: 20 dB
OIP3: +20 dBm
Single Supply: 3V @ 65 mA
50 Ohm Matched Input/Output
Die Size: 2.52 x 1.32 x 0.1 mm
General Description
The HMC516 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifi er (LNA) which
covers the 7 to 17 GHz frequency range. The HMC516
provides 20 dB of small signal gain, 1.8 dB of noise
fi gure and has an output IP3 greater than +20 dBm.
The chip can easily be integrated into hybrid or MCM
assemblies due to its small size. All data is tested
with the chip in a 50 Ohm test fi xture connected via
0.075mm (3 mil) ribbon bonds of minimal length 0.31
mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires
may also be used to make the RFIN and RFOUT
connections.
GaAs PHEMT MMIC LOW NOISE
Min.
18
12
9 - 12
Typ.
20.5
0.02
2.0
10
15
15
16
20
65
AMPLIFIER, 7 - 17 GHz
Max.
0.03
2.6
88
Min.
18
13
12 - 17
20.5
0.02
Typ.
HMC516
1.8
10
17
16
17
20
65
Max.
0.03
2.3
88
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
dB
dB
dB
dB

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hmc516 Summary of contents

Page 1

... Typical Applications The HMC516 is ideal for use as a LNA or driver ampli for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain ...

Page 2

... Output IP3 vs. Temperature Order On-line at www.hittite.com HMC516 +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) ...

Page 3

... Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 24 22 Gain 20 18 P1dB 16 14 Noise Figure 12 10 2.5 3 Vdd (V) Order On-line at www.hittite.com HMC516 AMPLIFIER GHz 8 6 +25C +85C 4 -55C FREQUENCY (GHz) Pout Gain PAE 5 0 -20 ...

Page 4

... OBSERVE HANDLING PRECAUTIONS [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Order On-line at www.hittite.com HMC516 1 Idd (mA ...

Page 5

... Power Supply Voltage for the amplifi er. External bypass capacitors of 100 pF and 0.1 μF are required. This pad is AC coupled and matched to 50 Ohms. These pads must be connected to RF/DC ground for proper operation. Die Bottom must be connected to RF/DC ground. Order On-line at www.hittite.com HMC516 AMPLIFIER GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC516 3 mil Ribbon Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 3 mil Ribbon Bond (0.003” ...

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