hmc558 Hittite Microwave Corporation, hmc558 Datasheet

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hmc558

Manufacturer Part Number
hmc558
Description
Fundamental Mixer Chip, 5.5 - 14 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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4 - 78
4
Typical Applications
The HMC558 is ideal for:
• Microwave Radio
• Military & Space
• Communications, Radar & EW
• Test Equipment & Sensors
Functional Diagram
Electrical Specifi cations,
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Gain Compression (Input)
*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v01.1007
= +25° C, IF= 100 MHz, LO= +15 dBm*
Order On-line at www.hittite.com
Min.
35
20
8
5.5 - 10.0
DC - 6
Typ.
45
25
14
20
54
11
7
7
Features
High LO/RF Isolation: 45 dB
Passive Double Balanced Topology
Low Conversion Loss: 7 dB
Wide IF Bandwidth: DC - 6 GHz
Small Size: 0.91 x 0.94 x 0.1 mm
General Description
The HMC558 is a passive double balanced mixer
that can be used as an upconverter or downconverter
between 5.5 and 14 GHz. The miniature monolithic
mixer is fabricated in a GaAs MESFET process, and
requires no external components or matching circu-
itry. The HMC558 operates with LO drive levels as
low as +9 dBm and provides excellent LO to RF and
LO to IF isolation due to optimized balun structures.
Measurements were made with the chip mounted
into in a 50 ohm test fi xture and includes the para-
sitic effects of wire bond assembly. Connections were
made with a 1 mil wire bond with minimal length (<12
mil).
Max.
9.5
9.5
GaAs MMIC FUNDAMENTAL
Min.
30
20
10
MIXER, 5.5 - 14 GHz
10.0 - 14.0
DC - 6
Typ.
8.5
8.5
36
25
16
24
46
13
HMC558
Max.
10
10
Units
GHz
GHz
dBm
dBm
dBm
dB
dB
dB
dB
dB

Related parts for hmc558

hmc558 Summary of contents

Page 1

... GHz. The miniature monolithic mixer is fabricated in a GaAs MESFET process, and requires no external components or matching circu- itry. The HMC558 operates with LO drive levels as low as +9 dBm and provides excellent and isolation due to optimized balun structures. Measurements were made with the chip mounted into ohm test fi xture and includes the para- sitic effects of wire bond assembly ...

Page 2

... Return Loss @ LO = +15 dBm 0 -5 -10 -15 -20 - Upconverter Performance Conversion Gain vs. LO Drive -12 - Order On-line at www.hittite.com HMC558 MIXER, 5 GHz RF/IF LO/RF LO/ FREQUENCY (GHz FREQUENCY (GHz) +12 dBm +15 dBm +18 dBm +20 dBm ...

Page 3

... MxN Spurious Outputs mRF +25C RF = 8.1 GHz @ -10 dBm +85C -55C GHz @ +15 dBm All values in dBc below the IF output power level Order On-line at www.hittite.com HMC558 GaAs MMIC FUNDAMENTAL MIXER, 5 GHz +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C 7 9 ...

Page 4

... BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 9. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. Order On-line at www.hittite.com HMC558 MIXER, 5 GHz ...

Page 5

... IF frequency range. For operation to DC, this pin must not source or sink more than current or part non-function and possible part failure will result. Die bottom must be connected to RF/DC ground. Order On-line at www.hittite.com HMC558 MIXER, 5 GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC558 MIXER, 5 GHz 3 mil Ribbon Bond RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 3 mil Ribbon Bond RF Ground Plane 0.254mm (0.010” ...

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