hmc555 Hittite Microwave Corporation, hmc555 Datasheet
hmc555
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hmc555 Summary of contents
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... High Input IP3: +21 dBm Passive Topology Bias Required Compact Size: 1.49 x 1.15 x 0.1mm General Description The HMC555 is a compact I/Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process ...
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... Return Loss 0 -5 -10 -15 - Input IP3 vs. LO Drive Order On-line at www.hittite.com HMC555 GHz +25C +85C -55C FREQUENCY (GHz FREQUENCY (GHz +15 dBm LO = +17 dBm ...
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... Upconverter Performance Sideband Rejection vs. LO Drive -10 -15 -20 -25 +15dBm -30 +17dBm +19dBm -35 - Order On-line at www.hittite.com HMC555 GaAs MMIC I/Q MIXER GHz RETURN LOSS CONVERSION GAIN 0.5 1 1.5 2 2 FREQUENCY (GHz +15dBm LO = +17dBm LO = +19dBm ...
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... TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. Die Packaging Information Standard WP-3 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Order On-line at www.hittite.com HMC555 GHz nLO - ...
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... For operation to DC, this pad must not source/sink more than 3mA of current or die non-function and possible die failure will result. Pads 5 and 6 are alternate IF ports. The backside of the die must be connected to RF/DC ground. Order On-line at www.hittite.com HMC555 GaAs MMIC I/Q MIXER GHz Interface Schematic ...
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... Thick GaAs MMIC 0.076mm (0.003”) 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC555 GHz Wire Bond 3 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Wire Bond RF Ground Plane 0.254mm (0.010” ...