hmc559 Hittite Microwave Corporation, hmc559 Datasheet

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hmc559

Manufacturer Part Number
hmc559
Description
Wideband Power Amplifier Chip, Dc - 20 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC559
Manufacturer:
HITTITE
Quantity:
201
3 - 74
3
Typical Applications
The HMC559 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
Electrical Specifi cations,
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v03.0208
= +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Min.
11
25
Order On-line at www.hittite.com
DC - 6
±0.5
Typ.
0.01
400
4.5
13
22
16
28
30
37
Max.
0.02
Features
P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.50 x 0.1 mm
General Description
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifi er die which operates between DC and
20 GHz. The amplifi er provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain fl atness is slightly posi-
tive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifi er applications.
The HMC559 amplifi er I/O’s are internally matched to
50 Ohms facilitating integration into Multi-Chip-Mod-
ules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils).
POWER AMPLIFIER, DC - 20 GHz
Min.
24.5
11
6 - 12
13.5
±0.5
0.01
Typ.
27.5
400
3.5
15
16
29
36
Max.
0.02
GaAs PHEMT MMIC
Min.
11.5
23
12 - 20
HMC559
0.02
28.5
Typ.
±1.5
400
4.5
14
13
27
33
8
Max.
0.03
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB

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hmc559 Summary of contents

Page 1

... IP3 and +28 dBm of output power gain compression while requiring 400 mA from a +10V supply. Gain fl atness is slightly posi- tive from GHz making the HMC559 ideal for EW, ECM and radar driver amplifi er applications. The HMC559 amplifi er I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Mod- ules (MCMs) ...

Page 2

... Noise Figure vs. Temperature Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) +25C ...

Page 3

... Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg Gain P1dB 20 Psat IP3 15 10 9.5 10 Vdd Supply Voltage (V) Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC +25C +85C -55C FREQUENCY (GHz) 9.5V 10V 10. ...

Page 4

... Typical Supply Current vs. Vdd Vdd (V) +9.5 +10 +10.5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC Pout Gain PAE INPUT POWER (dBm) Max Pdiss @ +85C Max Pdiss @ +85C Max Pdiss @ +85C ...

Page 5

... Alternate 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE [2] 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC ...

Page 6

... Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 POWER AMPLIFIER GHz Description This pad is DC coupled and matched capacitor per application circuit herein. application note. capacitor per application circuit herein. Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC Interface Schematic ...

Page 7

... NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v03.0208 POWER AMPLIFIER GHz Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC ...

Page 8

... Thick GaAs MMIC 0.076mm (0.003”) 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC Ribbon Bond RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Ribbon Bond RF Ground Plane 0.254mm (0.010” ...

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