hmc564 Hittite Microwave Corporation, hmc564 Datasheet

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hmc564

Manufacturer Part Number
hmc564
Description
Low Noise Amplifier Chip, 7.0 - 13.5 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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1 - 78
1
Typical Applications
The HMC564 is ideal for use as a LNA or driver ampli-
fi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v00.0206
= +25° C, Vdd 1, 2 = +3V
Order On-line at www.hittite.com
Features
Noise Figure: 1.8 dB
Gain: 17 dB
OIP3: 24 dBm
Single Supply: +3V @ 51 mA
50 Ohm Matched Input/Output
Small Size: 1.96 x 0.98 x 0.10 mm
General Description
The HMC564 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifi er (LNA) chip which operates
from 7 to 13.5 GHz. The HMC564 features extremely
fl at performance characteristics including 17 dB of
small signal gain, 1.8 dB of noise fi gure and output
IP3 of 24 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, consistent output power,
single +3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fi xture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
GaAs PHEMT MMIC LOW NOISE
Min.
14
9
AMPLIFIER, 7 - 13.5 GHz
7 - 13.5
Typ.
0.02
14.5
1.8
17
15
16
12
24
51
HMC564
Max.
0.03
2.2
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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hmc564 Summary of contents

Page 1

... Typical Applications The HMC564 is ideal for use as a LNA or driver ampli for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment and Sensors • Military & Space Functional Diagram Electrical Specifi cations, Frequency Range Gain Gain Variation Over Temperature ...

Page 2

... Output Return Loss vs. Temperature 0 -5 -10 -15 -20 - Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 - Order On-line at www.hittite.com HMC564 +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C 9 10 ...

Page 3

... Gain, Noise Figure & Power vs. Supply Voltage @ 8 GHz 20 16 P1dB Gain 12 8 Noise Figure 4 0 2.5 3 Vdd (Vdc) Order On-line at www.hittite.com HMC564 AMPLIFIER 13.5 GHz +25C 8 +85C -55C FREQUENCY (GHz) Pout 5 Gain PAE 0 -15 ...

Page 4

... NOTES: [1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Order On-line at www.hittite.com HMC564 1 Idd (mA ...

Page 5

... This pad is AC coupled and matched to 50 Ohms from 7 - 13.5 GHz. Power Supply Voltage for the amplifi er. External bypass capacitors of 100 pF and 0.1 μF are required. This pad is AC coupled and matched to 50 Ohms from 7 - 13.5 GHz. Die Bottom must be connected to RF/DC ground. Order On-line at www.hittite.com HMC564 AMPLIFIER 13.5 GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC564 Wire Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Wire Bond (0.003” ...

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