hmc566 Hittite Microwave Corporation, hmc566 Datasheet

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hmc566

Manufacturer Part Number
hmc566
Description
Low Noise Amplifier Chip, 29 - 36 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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HMC566
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1 - 90
1
Typical Applications
The HMC566 is ideal for use as a LNA or driver ampli-
fi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v00.0306
= +25° C, Vdd 1, 2, 3, 4 = +3V
Order On-line at www.hittite.com
Min.
17
9
29 - 33
0.03
23.5
Typ.
14.5
2.8
20
15
12
80
9
Features
Noise Figure: 2.8 dB
Gain: 20 dB
OIP3: 23.5 dBm
Single Supply: +3V @ 80 mA
50 Ohm Matched Input/Output
Small Size: 2.54 x 0.98 x 0.10 mm
General Description
The HMC566 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifi er (LNA) chip which operates
from 29 to 36 GHz. The HMC566 provides 20 dB of
small signal gain, 2.8 dB of noise fi gure and output
IP3 of 23.5 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, slightly positive gain slope,
single +3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fi xture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
GaAs PHEMT MMIC LOW NOISE
Max.
0.05
3.3
AMPLIFIER, 29 - 36 GHz
Min.
19
9
33 - 36
0.03
23.5
Typ.
14.5
2.8
22
15
12
80
8
HMC566
Max.
0.05
3.3
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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hmc566 Summary of contents

Page 1

... Typical Applications The HMC566 is ideal for use as a LNA or driver ampli for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain ...

Page 2

... Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 - Order On-line at www.hittite.com HMC566 +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C 31 ...

Page 3

... Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz Gain P1dB Noise Figure 4 2.5 3 Vdd (Vdc) Order On-line at www.hittite.com HMC566 AMPLIFIER GHz +25C +85C -55C FREQUENCY (GHz) Pout Gain PAE -16 ...

Page 4

... NOTES: [1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Order On-line at www.hittite.com HMC566 1 Idd (mA ...

Page 5

... Ohms from GHz. Power Supply Voltage for the amplifi er. External bypass capacitors of 100 pF and 0.1 μF are required. This pad is AC coupled and matched to 50 Ohms from GHz. Die Bottom must be connected to RF/DC ground. Order On-line at www.hittite.com HMC566 AMPLIFIER GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC566 Wire Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Wire Bond (0.003” ...

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